FSMH132DG-(720-760W)-G12

Series-parallel circuit design, superior to third-cut and quarter-cut design.

N-type modules offer lower LID/LeTID degradation and better low light performance.

Dual-sided power generation gain increases with backside exposure to light, significantly
reducing LCOE

Minimizes the chance of degradation caused by PID phenomena through optimization of cell production technology.

Better light trapping and current collection to improve module power output and reliability.